IXFR26N50
ObsoleteDISC MSFT N-CH HIPERFETS-STD ISOPLUS247
IXFR26N50
ObsoleteDISC MSFT N-CH HIPERFETS-STD ISOPLUS247
Description
General part information
IXFR26N50 Series
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types. Advantages: Easy to mount Space savings High power density
Technical Specifications
Parameters and characteristics for this part
| Specification | IXFR26N50 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 26 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 160 nC |
| Input Capacitance (Ciss) (Max) | 4200 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | ISOPLUS247™ |
| Power Dissipation (Max) | 250 W |
| Rds On (Max) | 200 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources