Description
General part information
IRF7507 Series
The IRF7507TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The low profile (<lt/>1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF7507TRPBF |
|---|---|
| Configuration | N, P-Channel |
| Current - Continuous Drain (Id) (Maximum) | 1.7 A |
| Current - Continuous Drain (Id) (Typical) | 2.4 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 8 nC |
| Input Capacitance (Ciss) (Max) | 260 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.118 in |
| Package Name | Micro8™, 8-TSSOP, 8-MSOP |
| Package Width | 3 mm |
| Power - Max | 1.25 VA |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 700 mV |
Pricing
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CAD
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