CTXS-4606S

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Sanken Electric USA Inc.

DIODE ARRAY GP 600V 60A TO-3P

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Active

Sanken Electric USA Inc.

DIODE ARRAY GP 600V 60A TO-3P

Technical Specifications

Parameters and characteristics for this part

Specification	CTXS-4606S

Current - Average Rectified (Io) (per Diode)	60 A
Current - Reverse Leakage @ Vr	100 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SC-65-3, TO-3P-3
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-3P
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

DIODE ARRAY GP 600V 60A TO-3P

Part	Speed	Current - Average Rectified (Io) (per Diode)	Package / Case	Current - Reverse Leakage @ Vr	Diode Configuration	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]
Sanken Electric USA Inc. CTXS-4606S	200 mA, 500 ns	60 A	SC-65-3, TO-3P-3	100 µA	1 Pair Common Cathode	TO-3P	1.7 V	Standard	150 °C	-40 °C	Through Hole	35 ns	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 600 V 60A Through Hole TO-3P-3, SC-65-3

Technical documentation and resources