Specification	WNSC6D16650CW6Q

Capacitance	780 pF
Current - Average Rectified (Io)	16 A
Current - Reverse Leakage	80 µA
Mounting Type	Through Hole
Operating Temperature - Junction	175 °C
Package / Case	TO-247-3
Package Name	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Voltage - Forward (Vf) (Max)	1.45 V

WNSC6 Series

Part	Current - Reverse Leakage	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Operating Temperature - Junction	Current - Average Rectified (Io)	Mounting Type	Package Name	Voltage - Forward (Vf) (Max)	Voltage - DC Reverse (Vr) (Max)	Package / Case	Technology	Capacitance	Diode Pair Count	Diode Configuration	Current - Average Rectified (Io) (per Diode)
WeEn Semiconductors WNSC6D16650B6J	80 µA	500 mA	No Recovery Time	500 mA 500 mA	175 °C	16 A	Surface Mount	D2PAK	1.45 V	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	SiC (Silicon Carbide) Schottky	780 pF
WeEn Semiconductors WNSC6D20650B6J	80 µA	500 mA	No Recovery Time	500 mA 500 mA	175 °C	20 A	Surface Mount	D2PAK	1.55 V	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	SiC (Silicon Carbide) Schottky	780 pF
WeEn Semiconductors WNSC6D166506Q	80 µA	500 mA	No Recovery Time	500 mA 500 mA	175 °C	16 A	Through Hole	TO-220AC	1.45 V	650 V	TO-220-2	SiC (Silicon Carbide) Schottky	780 pF
WeEn Semiconductors WNSC6D20650CW6Q	50 µA	500 mA	No Recovery Time	500 mA 500 mA	175 °C		Through Hole	TO-247-3	1.45 V	650 V	TO-247-3	SiC (Silicon Carbide) Schottky		1 pair	Common Cathode	20 A
WeEn Semiconductors WNSC6D16650CW6Q	80 µA	500 mA	No Recovery Time	500 mA 500 mA	175 °C	16 A	Through Hole	TO-247-3	1.45 V	650 V	TO-247-3	SiC (Silicon Carbide) Schottky	780 pF
WeEn Semiconductors WNSC6D04650Q	30 µA	500 mA	No Recovery Time	500 mA 500 mA	175 °C	4 A	Through Hole	TO-220AC	1.4 V	650 V	TO-220-2	SiC (Silicon Carbide) Schottky	233 pF
WeEn Semiconductors WNSC6D01650MBJ	20 µA	500 mA	No Recovery Time	500 mA 500 mA	175 °C	1 A	Surface Mount	SMB	1.4 V	650 V	DO-214AA SMB	SiC (Silicon Carbide) Schottky	130 pF

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