
BUK9K49-80LX
ActiveNexperia USA Inc.
DUAL N-CHANNEL 80 V, 49 MOHM LOGIC LEVEL MOSFET IN LFPAK56D

BUK9K49-80LX
ActiveNexperia USA Inc.
DUAL N-CHANNEL 80 V, 49 MOHM LOGIC LEVEL MOSFET IN LFPAK56D
Description
General part information
BUK9K49-80L Series
Dual N-channel logic level MOSFET in an LFPAK56D (Dual Power-SO8) package. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | BUK9K49-80LX |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Ta) | 17 A |
| Drain to Source Voltage (Vdss) | 80 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 17.6 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 1028 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-LFPAK56, SOT-1205 |
| Package Name | LFPAK56D |
| Power - Max (Ta) | 32 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 48.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2.05 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Understanding the MOSFET peak drain current rating
Power MOSFET single-shot and repetitive avalanche ruggedness rating
Power MOSFET gate driver fundamentals
Failure signature of Electrical Overstress on Power MOSFETs
Using power MOSFETs in DC motor control applications
Paralleling power MOSFETs in high power applications
MOSFETs in Power Switch applications
Driving solenoids in automotive applications
LFPAK MOSFET thermal resistance - simulation, test and optimization of PCB layout
LFPAK MOSFET thermal design guide
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Automotive LED side light SEPIC DC-to-DC converter design example
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Reflow soldering profile
Designing in MOSFETs for safe and reliable gate-drive operation
Nexperia package poster
Wave soldering profile
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