Specification	AUIRS2123STR

Channel Type	Single
Current - Peak Output (Sink)	500 mA
Current - Peak Output (Source)	0.5 A
Driven Configuration	High-Side
Fall Time (Typ)	80 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
Grade	Automotive
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Qualification	AEC-Q100
Rise Time (Typ)	80 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

AUIRS2123 Series

Part	Gate Type	Current - Peak Output (Source)	Current - Peak Output (Sink)	Number of Drivers	Package Length	Package Name	Package Width	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	High Side Voltage - Max (Bootstrap)	Input Type	Gate Channel	Rise Time (Typ)	Fall Time (Typ)	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Qualification	Driven Configuration	Channel Type	Grade
INFINEON AUIRS2123S	IGBT MOSFET N-Channel MOSFET	0.5 A	500 mA	1	0.154 in	8-SOIC	3.9 mm	-55 °C	150 °C	Surface Mount	600 V	Non-Inverting	N-Channel	80 ns	80 ns	10 VDC	20 V	AEC-Q100	High-Side	Single	Automotive
INFINEON AUIRS2123STR	IGBT MOSFET N-Channel MOSFET	0.5 A	500 mA	1	0.154 in	8-SOIC	3.9 mm	-55 °C	150 °C	Surface Mount	600 V	Non-Inverting	N-Channel	80 ns	80 ns	10 VDC	20 V	AEC-Q100	High-Side	Single	Automotive

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