Specification	RJK0854DPB-00#J5

Current - Continuous Drain (Id) (Ta)	25 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	27 nC
Input Capacitance (Ciss) (Max)	2000 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK
Power Dissipation (Max)	55 W
Rds On (Max)	13 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

RJK0854DPB Series

Nch Power MOSFET 80V 25A 13mohm LFPAK56

Part	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature	Rds On (Max)	Package Name	FET Type	Package / Case	Mounting Type	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)
Renesas Electronics Corporation RJK0854DPB-00#J5	20 V	MOSFET (Metal Oxide)	10 V	80 V	150 °C	13 mOhm	LFPAK	N-Channel	SC-100 SOT-669	Surface Mount	27 nC	25 A	2000 pF	55 W

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