AON4605_001

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 4.3A/3.4A 8DFN

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Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 4.3A/3.4A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AON4605_001

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3.4 A, 4.3 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	5 nC
Input Capacitance (Ciss) (Max) @ Vds	210 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	1.9 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	8-DFN (3x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	FET Feature	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Vgs(th) (Max) @ Id	Configuration	Technology
Alpha & Omega Semiconductor Inc. AON4605_001	5 nC	30 V	Logic Level Gate	50 mOhm	8-DFN (3x2)	3.4 A 4.3 A	Surface Mount	-55 °C	150 °C	210 pF	1.9 W	2.5 V	N and P-Channel	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 4.3A, 3.4A 1.9W Surface Mount 8-DFN (3x2)

Technical documentation and resources