TTC008(Q)
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 285 V, 1.5 A, NEW PW-MOLD2
TTC008(Q)
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, NPN BIPOLAR TRANSISTOR, 285 V, 1.5 A, NEW PW-MOLD2
Description
General part information
TTC008 Series
Bipolar Transistors, NPN Bipolar Transistor, 285 V, 1.5 A, New PW-Mold2
Technical Specifications
Parameters and characteristics for this part
| Specification | TTC008(Q) |
|---|---|
| Current - Collector (Ic) (Max) | 1.5 A |
| Current - Collector Cutoff (Max) | 10 µA |
| DC Current Gain (hFE) (Min) | 80 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Package Name | PW-MOLD2 |
| Power - Max | 1.1 W |
| Transistor Type | NPN |
| Vce Saturation (Max) | 1 V |
| Voltage - Collector Emitter Breakdown (Max) | 285 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
TTC008(Q) | Datasheet
The thermal stability and thermal design:Bipolar Transistor Application Notes
The maximum ratings:Bipolar Transistor Application Notes
The terms used in data sheets:Bipolar Transistor Application Notes
TTC008 Data sheet/Japanese
The electrical characteristics and equivalent circuit:Bipolar Transistor Application Notes
Selection Guide Power Devices 2025 Rev1.0
Surface Mount Small Signal Transistor (BJT) Precautions for use