IPP12CNE8N G

Obsolete

Infineon Technologies

MOSFET N-CH 85V 67A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 85V 67A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP12CNE8N G

Current - Continuous Drain (Id) @ 25°C	67 A
Drain to Source Voltage (Vdss)	85 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4340 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	12.9 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)
Infineon Technologies IPP12CNE8N G	10 V	67 A	4340 pF	N-Channel	64 nC	Through Hole	4 V	12.9 mOhm	125 W	MOSFET (Metal Oxide)	20 V	-55 °C	175 ░C	TO-220-3	PG-TO220-3	85 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 85 V 67A (Tc) 125W (Tc) Through Hole PG-TO220-3

Technical documentation and resources