1SS294,LF

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 100MA S-MINI

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 100MA S-MINI

Technical Specifications

Parameters and characteristics for this part

Specification	1SS294,LF

Capacitance @ Vr, F	25 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Speed	Any Speed
Speed	200 mA
Supplier Device Package	S-Mini
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V

DIODE SCHOTTKY 40V 100MA S-MINI

Part	Current - Average Rectified (Io)	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Technology	Speed	Speed	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Capacitance @ Vr, F
Toshiba Semiconductor and Storage 1SS294,LF	100 mA	SC-59, SOT-23-3, TO-236-3	Surface Mount	40 V	S-Mini	Schottky	Any Speed	200 mA	5 µA	125 °C	25 pF

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General part information

Diode 40 V 100mA Surface Mount S-Mini

Technical documentation and resources