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INFINEON BSC110N15NS5ATMA1

BSC061N08NS5ATMA1

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INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; SUPERSO8 5X6 PACKAGE; 6.1 MOHM;

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INFINEON BSC110N15NS5ATMA1

BSC061N08NS5ATMA1

Active
INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; SUPERSO8 5X6 PACKAGE; 6.1 MOHM;

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Description

General part information

BSC061 Series

OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification fortelecomandserver power supplies. In addition, the device can also be utilized in other industrial applications such assolar,low voltage drivesandadapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on)reduction of up to 43%.

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC061N08NS5ATMA1
Current - Continuous Drain (Id) (Tc)82 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)33 nC
Input Capacitance (Ciss) (Max)2500 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TDSON-8-7
Power Dissipation (Max)74 W, 2.5 W
Rds On (Max)6.1 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.8 V

Pricing

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CAD

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