Specification	PSMN7R0-100PS,127

Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	125 nC, 125 nC
Input Capacitance (Ciss) (Max)	6686 pF
Mounting Type	Through Hole
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	269 W
Rds On (Max)	12 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

PSMN7R0 Series

N-channel 30 V 7 mΩ logic level MOSFET in LFPAK

Part	Drain to Source Voltage (Vdss)	Rds On (Max)	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Package Name	Technology	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Vgs(th) (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
Nexperia USA Inc. PSMN7R0-30MLC,115	30 V	7 mOhm	N-Channel	20 V	1076 pF	67 A	10 V	4.5 V	Surface Mount	LFPAK33	MOSFET (Metal Oxide)	17.9 nC	-55 °C	175 °C	8-LFPAK33 (5-Lead) SOT-1210	2.15 V	57 W
Nexperia USA Inc. PSMN7R0-30YL,115	30 V	7 mOhm	N-Channel	20 V	1270 pF	76 A	10 V	4.5 V	Surface Mount	LFPAK56 Power-SO8	MOSFET (Metal Oxide)	22 nC	-55 °C	175 °C	SC-100 SOT-669	2.15 V	51 W
Nexperia USA Inc. PSMN7R0-100PS,127	100 V	12 mOhm	N-Channel	20 V	6686 pF	100 A			Through Hole	TO-220AB	MOSFET (Metal Oxide)	125 nC 125 nC			TO-220-3	4 V	269 W	10 V

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