Specification	IRFU020

Current - Continuous Drain (Id) (Tc)	14 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	25 nC
Input Capacitance (Ciss) (Max)	640 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Package Name	TO-251AA
Power Dissipation (Max)	2.5 W, 42 W
Rds On (Max)	100 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRFU Series

Part	Input Capacitance (Ciss) (Max)	Mounting Type	Package / Case	Vgs(th) (Max)	Gate Charge (Max)	Technology	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Package Name	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)
Vishay Dale IRFU014	300 pF	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	4 V	11 nC	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	60 V	20 V	TO-251AA	2.5 W 25 W	7.7 A	10 V	200 mOhm
Vishay Dale IRFU020PBF	640 pF	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	4 V	25 nC	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	60 V	20 V	TO-251AA	2.5 W 42 W	14 A	10 V	100 mOhm
Vishay Dale IRFU020	640 pF	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	4 V	25 nC	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	60 V	20 V	TO-251AA	2.5 W 42 W	14 A	10 V	100 mOhm

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