Specification	SI4829DY-T1-GE3

Current - Continuous Drain (Id) (Tc)	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Max)	8 nC
Input Capacitance (Ciss) (Max)	210 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	3.1 W, 2 W
Rds On (Max)	215 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

SI4829 Series

Part	Gate Charge (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Vgs(th) (Max)	Package Name	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Current - Continuous Drain (Id) (Tc)	Package Length	Package Width	Technology	Drain to Source Voltage (Vdss)	FET Feature	FET Type	Power Dissipation (Max)	Rds On (Max)
Vishay Dale SI4829DY-T1-GE3	8 nC	Surface Mount	-55 °C	150 °C	12 V	1.5 V	8-SOIC	210 pF	2.5 V	4.5 V	2 A	0.154 in	3.9 mm	MOSFET (Metal Oxide)	20 V	Schottky Diode (Isolated)	P-Channel	2 W 3.1 W	215 mOhm

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