Specification	SI7850ADP-T1-GE3

Current - Continuous Drain (Id) (Ta)	10.3 A
Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	17 nC
Input Capacitance (Ciss) (Max)	790 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	3.6 W, 35.7 W
Rds On (Max)	19.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.8 V

SI7850 Series

Part	Technology	Power Dissipation (Max)	FET Type	Gate Charge (Max)	Vgs(th) (Max)	Vgs (Max)	Mounting Type	Package / Case	Package Name	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)
Vishay Dale SI7850DP-T1-E3	MOSFET (Metal Oxide)	1.8 W	N-Channel	27 nC	3 V	20 V	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8	6.2 A	-55 °C	150 °C	10 V	4.5 V	22 mOhm	60 V
Vishay Dale SI7850DP-T1-GE3	MOSFET (Metal Oxide)	1.8 W	N-Channel	27 nC	3 V	20 V	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8	6.2 A	-55 °C	150 °C	10 V	4.5 V	22 mOhm	60 V
Vishay Dale SI7850ADP-T1-GE3	MOSFET (Metal Oxide)	3.6 W 35.7 W	N-Channel	17 nC	2.8 V	20 V	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8	10.3 A	-55 °C	150 °C	10 V	4.5 V	19.5 mOhm	60 V	12 A	790 pF

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