Specification	SISS67DN-T1-GE3

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	111 nC
Input Capacitance (Ciss) (Max)	4380 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8S
Package Name	PowerPAK® 1212-8S
Power Dissipation (Max)	65.8 W
Rds On (Max)	5.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	2.5 V

SISS67 Series

Part	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Vgs(th) (Max)	Vgs (Max)	Package Name	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Power Dissipation (Max)
Vishay Dale SISS67DN-T1-GE3	PowerPAK® 1212-8S	-55 °C	150 °C	5.5 mOhm	10 V	4.5 V	MOSFET (Metal Oxide)	2.5 V	25 V	PowerPAK® 1212-8S	4380 pF	60 A	P-Channel	Surface Mount	30 V	111 nC	65.8 W

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