Specification	SIA459EDJ-T1-GE3

Current - Continuous Drain (Id) (Tc)	9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	30 nC
Input Capacitance (Ciss) (Max)	885 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-50 °C
Package / Case	PowerPAK® SC-70-6
Package Name	PowerPAK® SC-70-6
Power Dissipation (Max)	15.6 W, 2.9 W
Rds On (Max)	35 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.2 V

SIA459 Series

Part	Mounting Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Vgs (Max)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Gate Charge (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Package / Case
Vishay Dale SIA459EDJ-T1-GE3	Surface Mount	2.5 V	4.5 V	12 V	35 mOhm	885 pF	-50 °C	150 °C	MOSFET (Metal Oxide)	P-Channel	20 V	1.2 V	30 nC	PowerPAK® SC-70-6	9 A	2.9 W 15.6 W	PowerPAK® SC-70-6

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