IRLS3036TRLPBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 2.4 MOHM;

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Infineon Technologies

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 2.4 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRLS3036TRLPBF

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	140 nC
Input Capacitance (Ciss) (Max) @ Vds	11210 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	380 W
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Infineon Technologies IRLS3036TRL7PP	160 nC	60 V	-55 °C	175 ░C	380 W	4.5 V 10 V	D2PAK (7-Lead)	D2PAK TO-263-7 TO-263CB	11270 pF	Surface Mount	16 V	MOSFET (Metal Oxide)	1.9 mOhm	2.5 V	N-Channel	240 A
Infineon Technologies IRLS3036TRLPBF	140 nC	60 V	-55 °C	175 ░C	380 W	4.5 V 10 V	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	11210 pF	Surface Mount	16 V	MOSFET (Metal Oxide)		2.5 V	N-Channel	195 A	2.4 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 195A (Tc) 380W (Tc) Surface Mount D2PAK

Technical documentation and resources