Specification	IRS2124SPBF

Channel Type	Single
Current - Peak Output (Sink)	500 mA
Current - Peak Output (Source)	0.5 A
Driven Configuration	High-Side
Fall Time (Typ)	80 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Inverting
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	80 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IRS2124 Series

Part	Gate Type	Gate Channel	Current - Peak Output (Source)	Current - Peak Output (Sink)	Rise Time (Typ)	Fall Time (Typ)	Number of Drivers	Channel Type	High Side Voltage - Max (Bootstrap)	Operating Temperature (Min)	Operating Temperature (Max)	Package Length	Package Name	Package Width	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Driven Configuration	Input Type	Mounting Type
INFINEON IRS2124STRPBF	IGBT MOSFET N-Channel MOSFET	N-Channel	0.5 A	500 mA	80 ns	80 ns	1	Single	600 V	-40 °C	150 °C	0.154 in	8-SOIC	3.9 mm	10 VDC	20 V	High-Side	Inverting	Surface Mount
INFINEON IRS2124STRPBF	IGBT MOSFET	N-Channel	0.5 A	500 mA	80 ns	80 ns	1	Single	600 V	-40 °C	150 °C	0.154 in	8-SOIC	3.9 mm	10 VDC	20 V	High-Side	Inverting	Surface Mount
INFINEON IRS2124SPBF	IGBT MOSFET N-Channel MOSFET	N-Channel	0.5 A	500 mA	80 ns	80 ns	1	Single	600 V	-40 °C	150 °C	0.154 in	8-SOIC	3.9 mm	10 VDC	20 V	High-Side	Inverting	Surface Mount
INFINEON IRS2124SPBF	IGBT MOSFET N-Channel MOSFET	N-Channel	0.5 A	500 mA	80 ns	80 ns	1	Single	600 V	-40 °C	150 °C	0.154 in	8-SOIC	3.9 mm	10 VDC	20 V	High-Side	Inverting	Surface Mount

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