BFP196WNH6327XTSA1

LTB

INFINEON

TRANSISTOR, NPN, 12V, 0.15A, SOT-343 ROHS COMPLIANT: YES

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BFP196WNH6327XTSA1

LTB

INFINEON

TRANSISTOR, NPN, 12V, 0.15A, SOT-343 ROHS COMPLIANT: YES

Find alt

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Description Specifications Series Pricing CAD Documents

Description

General part information

BFP196 Series

NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchmark quality and reliability.

Technical Specifications

Parameters and characteristics for this part

Specification	BFP196WNH6327XTSA1

Current - Collector (Ic) (Max)	0.15 mA
DC Current Gain (hFE) (Min)	70
Frequency - Transition	7.5 GHz
Gain	9.7 dB
Mounting Type	Surface Mount
Noise Figure (Typical)	1.3 dB
Operating Temperature	150 °C
Package / Case	SOT-343, SC-82A
Package Name	PG-SOT343-4
Power - Max	700 mW
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12 V

BFP196 Series

Part	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	Package Name	Gain (Min)	Gain (Max)	Noise Figure (Typical) Maximum	Noise Figure (Typical) Minimum	Transistor Type	Mounting Type	Current - Collector (Ic) (Max)	DC Current Gain (hFE) (Min)	Package / Case	Power - Max	Frequency - Transition	Noise Figure (Typical)	Gain
INFINEON BFP196WH6327XTSA1	12 V	150 °C	PG-SOT343-4-1	12.5 dB	19 dB	2.3 dB	1.3 dB	NPN	Surface Mount	0.15 mA	70	SC-82A SOT-343	700 mW	7.5 GHz
INFINEON BFP196WNH6327XTSA1	12 V	150 °C	PG-SOT343-4					NPN	Surface Mount	0.15 mA	70	SC-82A SOT-343	700 mW	7.5 GHz	1.3 dB	9.7 dB

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

BFP196WNH6327XTSA1 | Datasheet