Specification	SIRA64DP-T1-RE3

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	65 nC, 65 nC
Input Capacitance (Ciss) (Max)	3420 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	27.8 W
Rds On (Max)	2.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.2 V

SIRA64 Series

Part	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	FET Type	Package / Case	Gate Charge (Max)	Mounting Type	Package Name	Power Dissipation (Max)	Rds On (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)
Vishay Dale SIRA64DP-T1-RE3	60 A	2.2 V	N-Channel	PowerPAK® SO-8	65 nC 65 nC	Surface Mount	PowerPAK® SO-8	27.8 W	2.1 mOhm	-16 V	20 V	MOSFET (Metal Oxide)	10 V	4.5 V	-55 °C	150 °C	30 V	3420 pF

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