AON2705

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 3A 6DFN

Search across all available documentation for this part.

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 3A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AON2705

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Feature	Schottky Diode (Body)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	108 mOhm
Supplier Device Package	6-DFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Feature	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
Alpha & Omega Semiconductor Inc. AON2705	4.5 V 10 V	20 V	3 A	6 nC	MOSFET (Metal Oxide)	Schottky Diode (Body)	Surface Mount	P-Channel	30 V	1.5 W	2.3 V	108 mOhm	-55 °C	150 °C	6-DFN (2x2)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$