BPW85C

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Vishay General Semiconductor - Diodes Division

PHOTOTRANSISTOR 450 TO 1080 NM

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Vishay General Semiconductor - Diodes Division

PHOTOTRANSISTOR 450 TO 1080 NM

Technical Specifications

Parameters and characteristics for this part

Specification	BPW85C

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Dark (Id) (Max) [Max]	200 nA
Mounting Type	Through Hole
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-40 °C
Orientation	Top View
Package / Case	Radial
Power - Max [Max]	100 mW
Viewing Angle	50 °
Voltage - Collector Emitter Breakdown (Max) [Max]	70 V
Wavelength	850 nm

Part	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Viewing Angle	Operating Temperature [Max]	Operating Temperature [Min]	Wavelength	Mounting Type	Current - Dark (Id) (Max) [Max]	Power - Max [Max]	Orientation	Current - Collector (Ic) (Max) [Max]
Vishay General Semiconductor - Diodes Division BPW85	Radial	70 V	50 °	100 °C	-40 °C	850 nm	Through Hole	200 nA	150 mW	Top View	50 mA
Vishay General Semiconductor - Diodes Division BPW85C	Radial	70 V	50 °	100 °C	-40 °C	850 nm	Through Hole	200 nA	100 mW	Top View	100 mA

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General part information

Phototransistors 850nm Top View Radial

Technical documentation and resources