BPW85

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Vishay General Semiconductor - Diodes Division

PHOTOTRANSISTOR 450 TO 1080 NM

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Vishay General Semiconductor - Diodes Division

PHOTOTRANSISTOR 450 TO 1080 NM

Technical Specifications

Parameters and characteristics for this part

Specification	BPW85

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Dark (Id) (Max) [Max]	200 nA
Mounting Type	Through Hole
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-40 °C
Orientation	Top View
Package / Case	Radial
Power - Max [Max]	150 mW
Viewing Angle	50 °
Voltage - Collector Emitter Breakdown (Max) [Max]	70 V
Wavelength	850 nm

Part	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Viewing Angle	Operating Temperature [Max]	Operating Temperature [Min]	Wavelength	Mounting Type	Current - Dark (Id) (Max) [Max]	Power - Max [Max]	Orientation	Current - Collector (Ic) (Max) [Max]
Vishay General Semiconductor - Diodes Division BPW85	Radial	70 V	50 °	100 °C	-40 °C	850 nm	Through Hole	200 nA	150 mW	Top View	50 mA
Vishay General Semiconductor - Diodes Division BPW85C	Radial	70 V	50 °	100 °C	-40 °C	850 nm	Through Hole	200 nA	100 mW	Top View	100 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Phototransistors 850nm Top View Radial

Technical documentation and resources