DMP3050LSS-13

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Diodes Inc

MOSFET, P-CH, 30V, 4.8A, SOIC ROHS COMPLIANT: YES

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Active

Diodes Inc

MOSFET, P-CH, 30V, 4.8A, SOIC ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	DMP3050LSS-13

Current - Continuous Drain (Id) @ 25°C	4.8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	10.5 nC
Input Capacitance (Ciss) (Max) @ Vds	620 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.7 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2 V

P-Channel Enhancement Mode MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case [y]	Package / Case [x]	Supplier Device Package
Diodes Inc DMP3050LVT-7	4.5 A	50 mOhm	10.5 nC	P-Channel	SOT-23-6 Thin TSOT-23-6	620 pF	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	25 V	2 V	1.8 W	30 V	4.5 V 10 V
Diodes Inc DMP3050LSS-13	4.8 A	45 mOhm	10.5 nC	P-Channel	8-SOIC	620 pF	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	25 V	2 V	1.7 W	30 V	4.5 V 10 V	3.9 mm	0.154 in	8-SO

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

TN1.pdf

Technical documentation and resources