CY62136EV30LL-45BVXI

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Infineon Technologies

SRAM, 2 MBIT, 128K X 16BIT, VFBGA, 48 PINS, 3.6 V

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CY62136EV30LL-45BVXI

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Infineon Technologies

SRAM, 2 MBIT, 128K X 16BIT, VFBGA, 48 PINS, 3.6 V

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CY62136EV30LL-45BVXI

Access Time	45 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Size	2 Gbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	48-VFBGA
Supplier Device Package	48-VFBGA (6x8)
Technology	SRAM - Asynchronous
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	2.2 V
Write Cycle Time - Word, Page [custom]	45 ns
Write Cycle Time - Word, Page [custom]	45 ns

CY62136 Series

Part	Voltage - Supply [Min]	Voltage - Supply [Max]	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Memory Type	Package / Case	Package / Case	Package / Case	Memory Format	Memory Interface	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Access Time	Supplier Device Package	Memory Size	Technology
Infineon Technologies CY62136EV30LL-45ZSXI	2.2 V	3.6 V	45 ns	45 ns	Volatile	10.16 mm	10.16 mm	44-TSOP	SRAM	Parallel	85 °C	-40 °C	Surface Mount	45 ns	44-TSOP II	2 Gbit	SRAM - Asynchronous
Infineon Technologies CY62136FV30LL-45ZSXIT	2.2 V	3.6 V	45 ns	45 ns	Volatile	10.16 mm	10.16 mm	44-TSOP	SRAM	Parallel	85 °C	-40 °C	Surface Mount	45 ns	44-TSOP II	2 Gbit	SRAM - Asynchronous
Infineon Technologies CY62136FV30LL-55ZSXE	2.2 V	3.6 V	55 ns	55 ns	Volatile	10.16 mm	10.16 mm	44-TSOP	SRAM	Parallel	125 °C	-40 °C	Surface Mount	55 ns	44-TSOP II	2 Gbit	SRAM - Asynchronous
Infineon Technologies CY62136VLL-55BAI	2.7 V	3.6 V	55 ns	55 ns	Volatile			48-TFBGA	SRAM	Parallel	85 °C	-40 °C	Surface Mount	55 ns	48-FBGA (7x7)	2 Gbit	SRAM - Asynchronous
Infineon Technologies CY62136VLL-70ZSXE	2.7 V	3.6 V			Volatile	10.16 mm	10.16 mm	44-TSOP	SRAM	Parallel	125 °C	-40 °C	Surface Mount	70 ns	44-TSOP II	2 Gbit	SRAM - Asynchronous
Infineon Technologies CY62136CV30LL-70BVXI	2.7 V	3.3 V			Volatile			48-VFBGA	SRAM	Parallel	85 °C	-40 °C	Surface Mount	70 ns	48-VFBGA (6x8)	2 Gbit	SRAM - Asynchronous
Infineon Technologies CY62136FV30LL-45BVXIT	2.2 V	3.6 V	45 ns	45 ns	Volatile			48-VFBGA	SRAM	Parallel	85 °C	-40 °C	Surface Mount	45 ns	48-VFBGA (6x8)	2 Gbit	SRAM - Asynchronous
Infineon Technologies CY62136EV30LL-45BVXI	2.2 V	3.6 V	45 ns	45 ns	Volatile			48-VFBGA	SRAM	Parallel	85 °C	-40 °C	Surface Mount	45 ns	48-VFBGA (6x8)	2 Gbit	SRAM - Asynchronous
Infineon Technologies CY62136ESL-45ZSXI	2.2 V	5.5 V	45 ns	45 ns	Volatile	10.16 mm	10.16 mm	44-TSOP	SRAM	Parallel	85 °C	-40 °C	Surface Mount	45 ns	44-TSOP II	2 Gbit	SRAM - Asynchronous
Infineon Technologies CY62136VLL-70ZSXE	2.7 V	3.6 V			Volatile	10.16 mm	10.16 mm	44-TSOP	SRAM	Parallel	125 °C	-40 °C	Surface Mount	70 ns	44-TSOP II	2 Gbit	SRAM - Asynchronous

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 4.35
		10	$ 3.95
		25	$ 3.86
		40	$ 3.84
		80	$ 3.45
		230	$ 3.43
		480	$ 3.31
		960	$ 3.14
Newark	Each	1	$ 3.86
		10	$ 3.39
		25	$ 3.36
		50	$ 3.33
		100	$ 3.30
		250	$ 2.69

Description

General part information

CY62136 Series

CY62136EV30LL-45BVXI is a CY62136EV30 MoBL® 2Mbit (128K × 16) static RAM. This high performance CMOS static RAM organized as 128K words by 16bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (active-low CE HIGH). The input/output pins (I/O0 through I/O15) are placed in a high impedance state when: deselected (active-low CE HIGH), outputs are disabled (active-low OE HIGH), both Byte High Enable and Byte Low Enable are disabled (active-low BHE, active-low BLE HIGH), or during a write operation (active-low CE LOW and active-low WE LOW).

Documents

Technical documentation and resources