Description
General part information
IPB009 Series
Lowest on-state resistance in small footprint packages make OptiMOS™3 30V the best choice for the demanding requirements of battery management, Or-ing, e-fuse and hot-swap application.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB009N03LGATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 180 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 227 nC |
| Input Capacitance (Ciss) (Max) | 25000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 6 Leads |
| Package Name | PG-TO263-7-3, TO-263-7, D2PAK |
| Power Dissipation (Max) | 250 W |
| Rds On (Max) | 0.95 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources