Specification	HN1A01FE-GR,LF

Current - Collector (Ic) (Max)	0.15 mA
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	200
Frequency - Transition	80 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Package Name	ES6
PNP Count	2
Power - Max	100 mW
Transistor Configuration	Dual
Transistor Type	PNP
Vce Saturation (Max)	300 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

HN1A01FE Series

Bipolar Transistors, PNP + PNP Bipolar Transistor, -50 V, -0.15 A, SOT-563(ES6)

Part	PNP Count	Transistor Configuration	Transistor Type	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max)	Current - Collector (Ic) (Max)	Mounting Type	Qualification	Package Name	Operating Temperature	Package / Case	DC Current Gain (hFE) (Min)	Current - Collector Cutoff (Max)	Power - Max	Grade
Toshiba Semiconductor and Storage HN1A01FE-Y,LXHF	2	Dual	PNP	80 MHz	50 V	300 mV	0.15 mA	Surface Mount	AEC-Q101	ES6	150 °C	SOT-563 SOT-666	120	100 nA	100 mW	Automotive
Toshiba Semiconductor and Storage HN1A01FE-GR,LF	2	Dual	PNP	80 MHz	50 V	300 mV	0.15 mA	Surface Mount		ES6	150 °C	SOT-563 SOT-666	200	100 nA	100 mW
Toshiba Semiconductor and Storage HN1A01FE-Y,LF	2	Dual	PNP	80 MHz	50 V	300 mV	0.15 mA	Surface Mount		ES6	150 °C	SOT-563 SOT-666	120	100 nA	100 mW
Toshiba Semiconductor and Storage HN1A01FE-GR,LXHF	2	Dual	PNP	80 MHz	50 V	300 mV	0.15 mA	Surface Mount	AEC-Q101	ES6	150 °C	SOT-563 SOT-666	200	100 nA	100 mW	Automotive