Specification	SIDR5102EP-T1-RE3

Current - Continuous Drain (Id) (Ta)	28.2 A
Current - Continuous Drain (Id) (Tc)	126 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	7.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	51 nC
Input Capacitance (Ciss) (Max)	2850 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8DC
Power Dissipation (Max)	150 W, 7.5 W
Rds On (Max)	4.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

SIDR5102 Series

Part	Package Name	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	FET Type	Mounting Type	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Max)
Vishay Dale SIDR5102EP-T1-RE3	PowerPAK® SO-8DC	20 V	7.5 W 150 W	2850 pF	10 V	7.5 V	4 V	N-Channel	Surface Mount	28.2 A	126 A	4.1 mOhm	PowerPAK® SO-8	-55 °C	175 °C	100 V	MOSFET (Metal Oxide)	51 nC

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