IPP60R600P7XKSA1

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Infineon Technologies

MOSFET, N-CH, 600V, 6A, TO-220

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Infineon Technologies

MOSFET, N-CH, 600V, 6A, TO-220

Technical Specifications

Parameters and characteristics for this part

Specification	IPP60R600P7XKSA1

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9 nC
Input Capacitance (Ciss) (Max) @ Vds	363 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
Infineon Technologies IPP60R600P7XKSA1	10 V	600 mOhm	Through Hole	-55 °C	150 °C	20 V	650 V	9 nC	MOSFET (Metal Oxide)	N-Channel	6 A	4 V	TO-220-3	363 pF	PG-TO220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 6A (Tc) 30W (Tc) Through Hole PG-TO220-3

Technical documentation and resources