D2601N90TXPSA1

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Infineon Technologies

9000 V RECTIFIER DIODE IN A CERAMIC DISC WITH 120 MM DIA AND A HEIGHT OF 26 MM

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Infineon Technologies

9000 V RECTIFIER DIODE IN A CERAMIC DISC WITH 120 MM DIA AND A HEIGHT OF 26 MM

Technical Specifications

Parameters and characteristics for this part

Specification	D2601N90TXPSA1

Current - Average Rectified (Io)	3040 A
Current - Reverse Leakage @ Vr	100 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	160 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-200AE
Speed	Standard Recovery >500ns
Speed	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	9000 V

Part	Mounting Type	Technology	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Speed	Speed	Current - Average Rectified (Io)
Infineon Technologies D2601N90TXPSA1	Chassis Mount	Standard	100 mA	9000 V	DO-200AE	-40 °C	160 °C	Standard Recovery >500ns	200 mA	3040 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	2	$ 1705.73

General part information

The D2601NRectifier Diode discsare assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 120mm and a height of 26mm.

Technical documentation and resources