Description
General part information
BSB056 Series
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).
Technical Specifications
Parameters and characteristics for this part
| Specification | BSB056N10NN3GXUMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 9 A |
| Current - Continuous Drain (Id) (Tc) | 83 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 74 nC |
| Input Capacitance (Ciss) (Max) | 5500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 3-WDSON |
| Package Name | CanPAK M™, MG-WDSON-2 |
| Power Dissipation (Max) | 78 W, 2.8 W |
| Rds On (Max) | 5.6 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
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CAD
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