IKW30N65ES5XKSA1

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650 V, 39.5 A TRENCHSTOP™ IGBT 5 S5 WITH ANTI-PARALLEL DIODE IN TO247 HOUSING. WITH A SWITCHING FREQUENCY RANGE FROM 10 KHZ TO 30 KHZ IT PERFECTLY MATCHES APPLICATIONS LIKE MID-HIGH FREQUENCY CONVERTER, RESONANT CONVERTER, UNINTERRUPTIBLE POWER SUPPLY OR WELDING CONVERTER.

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IKW30N65ES5XKSA1

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INFINEON

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Description Specifications Series Pricing CAD Documents

Description

General part information

IKW30N65 Series

The 650 V, 30 A hard-switchingTRENCHSTOP™ 5 S5IGBT in a TO-247 package addresses applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

Technical Specifications

Parameters and characteristics for this part

Specification	IKW30N65ES5XKSA1

Current - Collector (Ic) (Max)	62 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	70 nC
IGBT Type	Trench
Input Type	Standard
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-40 °C
Package / Case	TO-247-3
Package Name	PG-TO247-3
Power - Max	188 VA
Reverse Recovery Time (trr)	75 ns
Switching Energy (Off)	320 µJ
Switching Energy (On)	560 µJ
Td (off) @ 25°C	124 ns
Td (on) @ 25°C	17 ns
Test Condition Current	30 A
Test Condition Resistance	13 Ohm
Test Condition Voltage	400 V
Test Condition Voltage (Secondary)	15 V
Vce(on) (Max)	1.7 V
Voltage - Collector Emitter Breakdown (Max)	650 V

IKW30N65 Series

Part	Power - Max	Switching Energy (Off)	Switching Energy (On)	Reverse Recovery Time (trr)	Input Type	Current - Collector (Ic) (Max)	Test Condition Voltage (Secondary)	Test Condition Voltage	Test Condition Current	Test Condition Resistance	Package Name	Current - Collector Pulsed (Icm)	Td (off) @ 25°C	Td (on) @ 25°C	IGBT Type	Vce(on) (Max)	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Operating Temperature (Max)	Operating Temperature (Min)	Mounting Type	Gate Charge
INFINEON IKW30N65WR5XKSA1	185 W	330 µJ	990 µJ	95 ns	Standard	60 A	15 V	400 V	15 A	26 Ohm	PG-TO247-3	90 A	367 ns	39 ns	Trench	1.8 V	650 V	TO-247-3	175 °C	-40 °C	Through Hole	155 nC
INFINEON IKW30N65ES5XKSA1	188 VA	320 µJ	560 µJ	75 ns	Standard	62 A	15 V	400 V	30 A	13 Ohm	PG-TO247-3	120 A	124 ns	17 ns	Trench	1.7 V	650 V	TO-247-3	175 °C	-40 °C	Through Hole	70 nC
INFINEON IKW30N65H5XKSA1	188 VA	100 µJ	280 µJ	70 ns	Standard	55 A	15 V	400 V	15 A	23 Ohm	PG-TO247-3	90 A	190 ns	20 ns	Trench	2.1 V	650 V	TO-247-3	175 °C	-40 °C	Through Hole	70 nC

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Application Note EN

IKW30N65ES5XKSA1 | Datasheet

Optimizing layout for paralleling power discrete semiconductor devices

IKW30N65ES5

Infineon-MA005626483-MaterialContentSheet-v01_00-EN