Specification	SIS4608DN-T1-GE3

Current - Continuous Drain (Id) (Ta)	12.4 A
Current - Continuous Drain (Id) (Tc)	35.7 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	7.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	18 nC
Input Capacitance (Ciss) (Max)	740 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	27.1 W, 3.3 W
Rds On (Max)	11.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

SIS4608 Series

Part	Power Dissipation (Max)	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Package / Case	Vgs(th) (Max)	FET Type	Package Name	Technology	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Drain to Source Voltage (Vdss)
Vishay Dale SIS4608DN-T1-GE3	3.3 W 27.1 W	11.8 mOhm	10 V	7.5 V	20 V	PowerPAK® 1212-8	4 V	N-Channel	PowerPAK® 1212-8	MOSFET (Metal Oxide)	35.7 A	12.4 A	-55 °C	150 °C	Surface Mount	740 pF	18 nC	60 V
Vishay Dale SIS4608LDN-T1-GE3	3.3 W 27.1 W	11.5 mOhm	10 V	4.5 V	20 V	PowerPAK® 1212-8	3 V	N-Channel	PowerPAK® 1212-8	MOSFET (Metal Oxide)	36.2 A	12.6 A	-55 °C	150 °C	Surface Mount	905 pF	23 nC	60 V

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