BSH103,215
ActiveNexperia USA Inc.
MOSFET N-CH 30V 850MA TO236AB
BSH103,215
ActiveNexperia USA Inc.
MOSFET N-CH 30V 850MA TO236AB
Description
General part information
BSH103 Series
30 V, N-channel Trench MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | BSH103,215 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 850 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 2.1 nC |
| Input Capacitance (Ciss) (Max) | 83 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | TO-236AB |
| Power Dissipation (Max) | 540 mW |
| Rds On (Max) | 400 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 400 mV |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Reel pack for SMD, 11"; Q3/T4 product orientation
Reel pack for SMD, 7"; Q3/T4 product orientation
LFPAK MOSFET thermal design guide, Chinese version
Failure signature of Electrical Overstress on Power MOSFETs
Power MOSFET single-shot and repetitive avalanche ruggedness rating
Understanding power MOSFET data sheet parameters
RC Thermal Models
Nexperia package poster
Questions about package outline drawings
Understanding power MOSFET data sheet parameters
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
Power MOSFET frequently asked questions and answers
LFPAK MOSFET thermal design guide - Part 2
Reflow soldering profile
Wave soldering profile
Using power MOSFETs in parallel
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
