IXTH30N25

Obsolete

LITTELFUSE

MOSFET N-CH 250V 30A TO247

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IXTH30N25

Obsolete

LITTELFUSE

MOSFET N-CH 250V 30A TO247

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXTH30 Series

Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are "extended" when the positive feedback of electro-thermal instability is suppressed, giving rise to larger "operating windows." The FBSOAs are guaranteed at 75°C.

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH30N25

Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	136 nC
Input Capacitance (Ciss) (Max)	3950 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247 (IXTH)
Power Dissipation (Max)	200 W
Rds On (Max)	75 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IXTH30 Series

Disc Mosfet N-CH Std-Polar TO-247AD

Part	Mounting Type	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Package Name	Rds On (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Technology	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Vgs(th) (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)
LITTELFUSE IXTH30N25	Through Hole	136 nC	250 V	TO-247 (IXTH)	75 mOhm	200 W	30 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	TO-247-3	4 V	20 V	3950 pF	10 V
LITTELFUSE IXTH30N50L	Through Hole	240 nC	500 V	TO-247 (IXTH)	200 mOhm	400 W	30 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	TO-247-3	4.5 V	20 V	10200 pF	10 V
LITTELFUSE IXTH30N60P	Through Hole	82 nC	600 V	TO-247 (IXTH)	240 mOhm	540 W	30 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	TO-247-3	5 V	30 V	5050 pF	10 V
LITTELFUSE IXTH30N50P	Through Hole	70 nC	500 V	TO-247 (IXTH)	200 mOhm	460 W	30 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	TO-247-3	5 V	30 V	4150 pF	10 V
LITTELFUSE IXTH30N60P	Through Hole	82 nC	600 V	TO-247 (IXTH)	240 mOhm	540 W	30 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	TO-247-3	5 V	30 V	5050 pF	10 V
LITTELFUSE IXTH30N50P	Through Hole	70 nC	500 V	TO-247 (IXTH)	200 mOhm	460 W	30 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	TO-247-3	5 V	30 V	4150 pF	10 V
LITTELFUSE IXTH30N50L2	Through Hole	240 nC	500 V	TO-247 (IXTH)	200 mOhm	400 W	30 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	TO-247-3	4.5 V	20 V	8100 pF	10 V
LITTELFUSE IXTH30N50	Through Hole	227 nC	500 V	TO-247 (IXTH)	170 mOhm	360 W	30 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	TO-247-3	4 V	20 V	5680 pF	10 V
LITTELFUSE IXTH30N50L2	Through Hole	240 nC	500 V	TO-247 (IXTH)	200 mOhm	400 W	30 A	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	TO-247-3	4.5 V	20 V	8100 pF	10 V

Pricing

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