Specification	AUIRF8739L2TR

Current - Continuous Drain (Id) (Ta)	57 A
Current - Continuous Drain (Id) (Tc)	545 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	562 nC, 562 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	17890 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	DirectFET™ Isometric L8
Package Name	DirectFET™ Isometric L8
Power Dissipation (Max)	3.8 W, 340 W
Qualification	AEC-Q101
Rds On (Max)	0.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	40 V
Vgs(th) (Max)	3.9 V

AUIRF8739 Series

Part	Technology	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Mounting Type	FET Type	Rds On (Max)	Grade	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package Name	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Qualification	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Package / Case
INFINEON AUIRF8739L2TR	MOSFET (Metal Oxide)	562 nC 562 nC	17890 pF	3.9 V	Surface Mount	N-Channel	0.6 mOhm	Automotive	40 V	40 V	10 V	DirectFET™ Isometric L8	545 A	57 A	AEC-Q101	-55 °C	175 °C	3.8 W 340 W	DirectFET™ Isometric L8

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources