IAUC100N04S6L025ATMA1

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IAUC100N04S6L025 IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 2.5 MΩ MAX, SSO8 (5X6), OPTIMOS™-6 FOR HIGH EFFICIENCY AND RELIABILITY.

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IAUC100N04S6L025ATMA1

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INFINEON

IAUC100N04S6L025 IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 2.5 MΩ MAX, SSO8 (5X6), OPTIMOS™-6 FOR HIGH EFFICIENCY AND RELIABILITY.

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Description Specifications Series Pricing CAD Documents

Description

General part information

IAUC100 Series

Say goodbye to old technology and unlock new levels of performance with Infineon's latest product,IAUCN04S7L028. Discover the enhanced efficiency and reliability of our newest technology withIAUCN04S7L028

Technical Specifications

Parameters and characteristics for this part

Specification	IAUC100N04S6L025ATMA1

Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	34 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2019 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Name	PG-TDSON-8
Power Dissipation (Max)	62 W
Qualification	AEC-Q101
Rds On (Max)	2.56 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max)	2 V

IAUC100 Series

Part	Technology	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Qualification	FET Type	Package Name	Grade	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Vgs(th) (Max)	Vgs (Max)	Package / Case
INFINEON IAUC100N04S6L020ATMA1	MOSFET (Metal Oxide)	2.04 mOhm	-55 °C	175 °C	AEC-Q101	N-Channel	PG-TDSON-8	Automotive	10 V	4.5 V	75 W	Surface Mount	2744 pF	40 V	100 A	46 nC	2 V	16 V	8-PowerTDFN
INFINEON IAUC100N04S6L025ATMA1	MOSFET (Metal Oxide)	2.56 mOhm	-55 °C	175 °C	AEC-Q101	N-Channel	PG-TDSON-8	Automotive	10 V	4.5 V	62 W	Surface Mount	2019 pF	40 V	100 A	34 nC	2 V	16 V	8-PowerTDFN
INFINEON IAUC100N10S5L040ATMA1	MOSFET (Metal Oxide)	4 mOhm	-55 °C	175 °C	AEC-Q101	N-Channel	PG-TDSON-8-34	Automotive	10 V	4.5 V	167 W	Surface Mount	5200 pF	100 V	100 A	78 nC	2 V	20 V	8-PowerTDFN
INFINEON IAUC100N04S6L014ATMA1	MOSFET (Metal Oxide)	1.4 mOhm	-55 °C	175 °C	AEC-Q101	N-Channel	PG-TDSON-8	Automotive	10 V	4.5 V	100 W	Surface Mount	3935 pF	40 V	100 A	65 nC 65 nC	2 V	16 V	8-PowerTDFN
INFINEON IAUC100N04S6N028ATMA1	MOSFET (Metal Oxide)	2.86 mOhm	-55 °C	175 °C	AEC-Q101	N-Channel	PG-TDSON-8	Automotive	10 V	7 V	62 W	Surface Mount	1781 pF	40 V	100 A	29 nC	3 V	20 V	8-PowerTDFN
INFINEON IAUC100N10S5N040ATMA1	MOSFET (Metal Oxide)	4 mOhm	-55 °C	175 °C	AEC-Q101	N-Channel	PG-TDSON-8-34	Automotive	10 V	6 V	167 W	Surface Mount	5200 pF	100 V	100 A	78 nC	3.8 V	20 V	8-PowerTDFN
INFINEON IAUC100N04S6N022ATMA1	MOSFET (Metal Oxide)	2.26 mOhm	-55 °C	175 °C	AEC-Q101	N-Channel	PG-TDSON-8	Automotive	10 V	7 V	75 W	Surface Mount	2421 pF	40 V	100 A	39 nC	3 V	20 V	8-PowerTDFN
INFINEON IAUC100N08S5N043ATMA1	MOSFET (Metal Oxide)	4 mOhm	-55 °C	175 °C	AEC-Q101	N-Channel	PG-TDSON-8-34	Automotive	10 V	6 V	125 W	Surface Mount	3860 pF	80 V	100 A	56 nC	3.8 V	20 V	8-PowerTDFN
INFINEON IAUC100N04S6N015ATMA1	MOSFET (Metal Oxide)	1.55 mOhm	-55 °C	175 °C	AEC-Q101	N-Channel	PG-TDSON-8	Automotive	10 V	7 V	100 W	Surface Mount	3470 pF	40 V	100 A	55 nC	3 V	20 V	8-PowerTDFN

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Technical Data Sheet EN

IAUC100N04S6L025ATMA1 | Datasheet

Infineon-OptiMOS_6_40V_in_SS08-ProductBrief-v01_00-EN

Infineon-MA001701710-MaterialContentSheet-v02_00-EN

Customer Guideline for FIT Report