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2ED2778S01GXTMA1

2ED2778S01GXTMA1

Obsolete
INFINEON

IC GATE DRVR HALF-BRIDGE VSON-10

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2ED2778S01GXTMA1

2ED2778S01GXTMA1

Obsolete
INFINEON

IC GATE DRVR HALF-BRIDGE VSON-10

Find alt

Description

General part information

2ED2778 Series

MOTIX™ 160 V half bridgeSOI based gate driverwith typical 8 A source and 4 A sink currents in a small footprint VSON10, 3x3 mm package for N-ChannelMOSFETS. Integrated bootstrap diodes are used to supply the external high side bootstrap capacitor. Protection features include under voltage lockout on both Vcc and VB pins. The 2ED2778 is fully qualified for industrial applications according to the relevant tests of JEDEC78/20/22.

Technical Specifications

Parameters and characteristics for this part

Specification2ED2778S01GXTMA1
Channel TypeIndependent
Current - Peak Output (Sink)8 A
Current - Peak Output (Source)4 A
Driven ConfigurationHalf-Bridge
Fall Time (Typ)12 ns
Gate ChannelN-Channel
Gate TypeN-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)140 V
Input TypeNon-Inverting
Logic Voltage - VIH2 V
Logic Voltage - VIL0.8 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature (Max)125 °C
Operating Temperature (Min)-40 °C
Package / Case10-VFDFN Exposed Pad
Package NamePG-VSON-10-5
Rise Time (Typ)24 ns
Voltage - Supply (Maximum)18 V
Voltage - Supply (Minimum)7 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources