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TK31E60X - High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.088 Ω@10V, TO-220, DTMOSⅣ-H

TK4R3E06PL,S1X

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0043 Ω@10V, TO-220, U-MOSⅨ-H

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TK31E60X - High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.088 Ω@10V, TO-220, DTMOSⅣ-H

TK4R3E06PL,S1X

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0043 Ω@10V, TO-220, U-MOSⅨ-H

Find alt

Description

General part information

TK4R3E06PL Series

12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.0043 Ω@10V, TO-220, U-MOSⅨ-H

Technical Specifications

Parameters and characteristics for this part

SpecificationTK4R3E06PL,S1X
Current - Continuous Drain (Id) (Tc)80 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)48.2 nC
Input Capacitance (Ciss) (Max)3280 pF
Mounting TypeThrough Hole
Operating Temperature175 °C
Package / CaseTO-220-3
Package NameTO-220
Power Dissipation (Max)87 W
Rds On (Max)7.2 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Structures and Characteristics: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Calculating the Temperature of Discrete Semiconductor Devices
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
TK4R3E06PL Data sheet/Japanese
RC Snubbers for Step-Down Converters
MOSFET Secondary Breakdown
Electrical Characteristics: Power MOSFET Application Notes
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
TK4R3E06PL Data sheet/English
Selection Guide MOSFETs 2025 Rev1.0
Motor Control (Vacuum Cleaners)
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Maximum Ratings: Power MOSFET Application Notes
Derating of the MOSFET Safe Operating Area
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Simplified CFD Model Application Note
MOSFET Self-Turn-On Phenomenon
Hints and Tips for Thermal Design part3
MOSFET SPICE model grade
Avalanche energy calculation