Specification	SI4778DY-T1-E3

Current - Continuous Drain (Id) (Tc)	8 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	18 nC
Input Capacitance (Ciss) (Max)	680 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	2.4 W, 5 W
Rds On (Max)	23 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max)	2.2 V

SI4778 Series

Part	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Length	Package Name	Package Width	Power Dissipation (Max)	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Gate Charge (Max)	Mounting Type
Vishay Dale SI4778DY-T1-E3	2.2 V	-55 °C	150 °C	0.154 in	8-SOIC	3.9 mm	2.4 W 5 W	MOSFET (Metal Oxide)	10 V	4.5 V	680 pF	25 V	23 mOhm	N-Channel	8 A	16 V	18 nC	Surface Mount

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