Specification	IPB100N04S2L03ATMA1

Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	230 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	6000 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3-2
Power Dissipation (Max)	300 W
Qualification	AEC-Q101
Rds On (Max)	3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

IPB100N Series

Part	Package Name	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Power Dissipation (Max)	Mounting Type	Package / Case	Technology	Qualification	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Grade	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)
INFINEON IPB100N04S2L03ATMA1	PG-TO263-3-2	100 A	230 nC	6000 pF	3 mOhm	300 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	AEC-Q101	N-Channel	40 V	20 V	-55 °C	175 °C	Automotive	10 V	4.5 V	2 V
INFINEON IPB100N04S204ATMA1	PG-TO263-3-2	100 A	172 nC	5300 pF	3.3 mOhm	300 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	AEC-Q101	N-Channel	40 V	20 V	-55 °C	175 °C	Automotive			4 V	10 V
INFINEON IPB100N06S3L-03	PG-TO263-3-2	100 A	550 nC	26240 pF	2.7 mOhm	300 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	AEC-Q101	N-Channel	55 V	16 V	-55 °C	175 °C	Automotive	10 V	5 V	2.2 V
INFINEON IPB100N06S2L05ATMA1	PG-TO263-3-2	100 A	230 nC	5660 pF	4.4 mOhm 4.4 mOhm	300 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	AEC-Q101	N-Channel	55 V	20 V	-55 °C	175 °C	Automotive	10 V	4.5 V	2 V
INFINEON IPB100N06S3L-04	PG-TO263-3-2	100 A	362 nC	17270 pF	3.5 mOhm	214 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	AEC-Q101	N-Channel	55 V	16 V	-55 °C	175 °C	Automotive	10 V	5 V	2.2 V

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