Specification	SIA112LDJ-T1-GE3

Current - Continuous Drain (Id) (Ta)	3.5 A
Current - Continuous Drain (Id) (Tc)	8.8 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	11.8 nC, 11.8 nC
Input Capacitance (Ciss) (Max)	355 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-70-6
Package Name	PowerPAK® SC-70-6
Power Dissipation (Max)	15.6 W, 2.9 W
Rds On (Max)	119 mOhm, 14 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V, 25 V
Vgs(th) (Max)	2.5 V

SIA112 Series

Part	Power Dissipation (Max)	FET Type	Vgs(th) (Max)	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Package Name	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Package / Case
Vishay Dale SIA112LDJ-T1-GE3	2.9 W 15.6 W	N-Channel	2.5 V	MOSFET (Metal Oxide)	100 V	Surface Mount	11.8 nC 11.8 nC	3.5 A	8.8 A	PowerPAK® SC-70-6	14 mOhm 119 mOhm	10 V	4.5 V	-55 °C	150 °C	355 pF	20 V 25 V	PowerPAK® SC-70-6

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