Specification	SI8424DB-T1-E1

Current - Continuous Drain (Id) (Tc)	12.2 A
Drain to Source Voltage (Vdss)	8 V
FET Type	N-Channel
Gate Charge (Max)	33 nC
Input Capacitance (Ciss) (Max)	1950 pF, 1950 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	CSPBGA, 4-XFBGA
Package Name	4-Microfoot
Power Dissipation (Max)	6.25 W, 2.78 W
Rds On (Max)	31 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max)	1 V

SI8424 Series

Part	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Technology	FET Type	Package / Case	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Mounting Type	Vgs (Max)	Package Name	Current - Continuous Drain (Id) (Tc)
Vishay Dale SI8424CDB-T1-E1	40 nC	-55 °C	150 °C	1.1 W 2.7 W	8 V	2340 pF	20 mOhm	MOSFET (Metal Oxide)	N-Channel	4-UFBGA WLCSP	800 mV	6.3 A	Surface Mount	5 V	4-Microfoot
Vishay Dale SI8424DB-T1-E1	33 nC	-55 °C	150 °C	2.78 W 6.25 W	8 V	1950 pF 1950 pF	31 mOhm	MOSFET (Metal Oxide)	N-Channel	4-XFBGA CSPBGA	1 V		Surface Mount	5 V	4-Microfoot	12.2 A

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