UF3SC065007K4S

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Qorvo

MOSFET N-CH 650V 120A TO247-4

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Qorvo

MOSFET N-CH 650V 120A TO247-4

Technical Specifications

Parameters and characteristics for this part

Specification	UF3SC065007K4S

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	12 V, 12 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	214 nC
Input Capacitance (Ciss) (Max) @ Vds	8360 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	789 W
Rds On (Max) @ Id, Vgs [Max]	9 mOhm
Supplier Device Package	TO-247-4
Technology	SiCFET (Cascode SiCJFET)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	6 V

MOSFET N-CH 650V 120A TO247-4

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology	Vgs(th) (Max) @ Id [Max]	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)
Qorvo UF3SC065007K4S	TO-247-4	12 V, 12 V	650 V	8360 pF	20 V	N-Channel	214 nC	120 A	-55 °C	175 ░C	TO-247-4	SiCFET (Cascode SiCJFET)	6 V	Through Hole	9 mOhm	789 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 120A (Tc) 789W (Tc) Through Hole TO-247-4

Technical documentation and resources

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