Specification	SSM6N62TU,LXHF

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	800 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature Drive Voltage	1.2 V
Gate Charge (Max)	2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	177 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	Flat Leads, 6-SMD
Package Name	UF6
Power - Max (Ta)	500 mW
Qualification	AEC-Q101
Rds On (Max)	85 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1 V

SSM6N62TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.8 A, 0.085 Ω@4.5V, SOT-363F(UF6)

Part	Grade	Package / Case	Package Name	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Channel Count	Configuration	Configuration - Features	Operating Temperature	Mounting Type	Power - Max (Ta)	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Technology	Qualification	Vgs(th) (Max)	FET Feature	FET Feature Drive Voltage
Toshiba Semiconductor and Storage SSM6N62TU,LXHF	Automotive	6-SMD Flat Leads	UF6	20 V	177 pF	85 mOhm	2	N-Channel	Dual	150 °C	Surface Mount	500 mW	800 mA	2 nC	MOSFET (Metal Oxide)	AEC-Q101	1 V	Logic Level Gate	1.2 V
Toshiba Semiconductor and Storage SSM6N62TU,LF		6-SMD Flat Leads	UF6	20 V	177 pF	85 mOhm	2	N-Channel	Dual	150 °C	Surface Mount	500 mW	800 mA	2 nC	MOSFET (Metal Oxide)		1 V	Logic Level Gate	1.2 V

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