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BSC027N10NS5ATMA1

BSC027N10NS5ATMA1

NRND
INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 5X6 PACKAGE; 2.7 MOHM;

BSC027N10NS5ATMA1

BSC027N10NS5ATMA1

NRND
INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; SUPERSO8 5X6 PACKAGE; 2.7 MOHM;

Description

General part information

BSC027 Series

Infineon'sOptiMOS™ MOSFETs in SuperSO8package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC027N10NS5ATMA1
Current - Continuous Drain (Id) (Ta)23 A
Current - Continuous Drain (Id) (Tc)100 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)111 nC
Input Capacitance (Ciss) (Max)8200 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TSON-8-3
Power Dissipation (Max)214 W, 3 W
Rds On (Max)2.7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.8 V

Pricing

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CAD

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