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BSC0921NDIATMA1

BSC0921NDIATMA1

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INFINEON

OPTIMOS™ N+N DUAL POWER MOSFET 30 V ; ASYMMETRICAL DUAL 5X6 PACKAGE; 1.5 MOHM;

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BSC0921NDIATMA1

BSC0921NDIATMA1

Active
INFINEON

OPTIMOS™ N+N DUAL POWER MOSFET 30 V ; ASYMMETRICAL DUAL 5X6 PACKAGE; 1.5 MOHM;

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Description

General part information

BSC0921 Series

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC0921NDIATMA1
Channel Count2
ConfigurationN-Channel, Asymmetrical
Configuration - FeaturesDual
Current - Continuous Drain (Id) (Maximum)31 A
Current - Continuous Drain (Id) (Typical)17 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
FET Feature Drive Voltage4.5 V
Gate Charge (Max)8.9 nC
Input Capacitance (Ciss) (Max)1025 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePG-TISON-8
Power - Max1 VA
Rds On (Max)5 mOhm, 5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)2 V

Pricing

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