STP9N80K5

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STMicroelectronics

MOSFET N-CHANNEL 800V 7A TO220

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STMicroelectronics

MOSFET N-CHANNEL 800V 7A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	STP9N80K5

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	340 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STP9N80K5	900 mOhm	30 V	MOSFET (Metal Oxide)	Through Hole	800 V	TO-220-3	110 W	5 V	10 V	TO-220	-55 °C	150 °C	340 pF	N-Channel	12 nC	7 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 1.26

General part information

N-Channel 800 V 7A (Tc) 110W (Tc) Through Hole TO-220

Technical documentation and resources